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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1159–1162
(Mi phts6354)
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This article is cited in 2 scientific papers (total in 2 papers)
Electronic properties of semiconductors
Low-temperature conductivity of gadolinium sulfides
S. N. Mustafaevaa, S. M. Asadovb a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku
Abstract:
In samples of GdS$_{x}$ ($x$ = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdS$_{x}$ phases is established. The parameters of localized states in GdS$_{x}$ are determined.
Received: 26.01.2016 Accepted: 04.02.2016
Citation:
S. N. Mustafaeva, S. M. Asadov, “Low-temperature conductivity of gadolinium sulfides”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1159–1162; Semiconductors, 50:9 (2016), 1137–1140
Linking options:
https://www.mathnet.ru/eng/phts6354 https://www.mathnet.ru/eng/phts/v50/i9/p1159
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Abstract page: | 39 | Full-text PDF : | 12 |
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