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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1370–1373
(Mi phts6341)
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Semiconductor physics
Mechanism of microplasma turn-off upon the avalanche breakdown of silicon $p$–$n$ structures
A. M. Musaev Daghestan Institute of Physics after Amirkhanov, Makhachkala, Makhachkala, Russia
Abstract:
A possible mechanism for natural-microplasma turn-off in silicon $p$–$n$ junctions is studied. It is shown that the turn-off effect is not a random process, but is based on a certain physical mechanism. The mechanism is associated with the formation of graded-gap regions caused by thermoelastic stresses and electric- field redistribution in the microplasma region.
Received: 31.03.2016 Accepted: 04.04.2016
Citation:
A. M. Musaev, “Mechanism of microplasma turn-off upon the avalanche breakdown of silicon $p$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1370–1373; Semiconductors, 50:10 (2016), 1352–1355
Linking options:
https://www.mathnet.ru/eng/phts6341 https://www.mathnet.ru/eng/phts/v50/i10/p1370
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Statistics & downloads: |
Abstract page: | 49 | Full-text PDF : | 28 |
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