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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1370–1373 (Mi phts6341)  
Semiconductor physics

Mechanism of microplasma turn-off upon the avalanche breakdown of silicon $p$–$n$ structures

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Makhachkala, Russia
Full-text PDF (97 kB)
Abstract: A possible mechanism for natural-microplasma turn-off in silicon $p$–$n$ junctions is studied. It is shown that the turn-off effect is not a random process, but is based on a certain physical mechanism. The mechanism is associated with the formation of graded-gap regions caused by thermoelastic stresses and electric- field redistribution in the microplasma region.
Received: 31.03.2016
Accepted: 04.04.2016
English version:
Semiconductors, 2016, Volume 50, Issue 10, Pages 1352–1355
DOI: https://doi.org/10.1134/S1063782616100171
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. M. Musaev, “Mechanism of microplasma turn-off upon the avalanche breakdown of silicon $p$–$n$ structures”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1370–1373; Semiconductors, 50:10 (2016), 1352–1355
Citation in format AMSBIB
\Bibitem{Mus16}
\by A.~M.~Musaev
\paper Mechanism of microplasma turn-off upon the avalanche breakdown of silicon $p$--$n$ structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 10
\pages 1370--1373
\mathnet{http://mi.mathnet.ru/phts6341}
\elib{https://elibrary.ru/item.asp?id=27369015}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 10
\pages 1352--1355
\crossref{https://doi.org/10.1134/S1063782616100171}
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