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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1309–1312
(Mi phts6331)
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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals
O. I. Podkopaeva, A. F. Shimanskiib, S. A. Kopytkovaa, R. A. Filatovb, N. O. Golubovskayab a AO Germanii, Krasnoyarsk
b Siberian Federal University, Krasnoyarsk
Abstract:
The effect of doping on the optical transmittance of germanium single crystals is studied by infrared Fourier spectroscopy. It is established that the introduction of silicon and tellurium additives into germanium doped with antimony provides a means for improving the temperature stability of the optical properties of the crystals.
Received: 22.09.2016 Accepted: 17.03.2016
Citation:
O. I. Podkopaev, A. F. Shimanskii, S. A. Kopytkova, R. A. Filatov, N. O. Golubovskaya, “Study of the effect of doping on the temperature stability of the optical properties of germanium single crystals”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1309–1312; Semiconductors, 50:10 (2016), 1287–1290
Linking options:
https://www.mathnet.ru/eng/phts6331 https://www.mathnet.ru/eng/phts/v50/i10/p1309
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Abstract page: | 27 | Full-text PDF : | 16 |
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