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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 10, Pages 1303–1308 (Mi phts6330)  

This article is cited in 7 scientific papers (total in 7 papers)

Electronic properties of semiconductors

First-principles calculations of the electronic and structural properties of GaSb

E.-E. Castaño-Gonzáleza, N. Señab, V. Mendoza-Estradaa, R. González-Hernándeza, A. Dussanb, F. Mesac

a Grupo de Investigación en Física Aplicada, Departamento de Física, Universidad del Norte, Barranquilla-Colombia
b Departamento de Física, Grupo de Materiales Nanoestructurados y sus Aplicaciones, Universidad Nacional de Colombia-Colombia, Bogotá-Colombia
c Grupo NanoTech, Facultad de Ciencias Naturales y Matemáticas, Universidad del Rosario, Bogotá-Colombia
Full-text PDF (912 kB) Citations (7)
Abstract: In this paper, we carried out first-principles calculations in order to investigate the structural and electronic properties of the binary compound gallium antimonide (GaSb). This theoretical study was carried out using the Density Functional Theory within the plane-wave pseudopotential method. The effects of exchange and correlation (XC) were treated using the functional Local Density Approximation (LDA), generalized gradient approximation (GGA): Perdew–Burke–Ernzerhof (PBE), Perdew–Burke–Ernzerhof revised for solids (PBEsol), Perdew–Wang 91 (PW91), revised Perdew–Burke–Ernzerhof (rPBE), Armiento–Mattson 2005 (AM05) and meta-generalized gradient approximation (meta-GGA): Tao–Perdew–Staroverov–Scuseria (TPSS) and revised Tao–Perdew–Staroverov–Scuseria (RTPSS) and modified Becke–Johnson (MBJ). We calculated the densities of state (DOS) and band structure with different XC potentials identified and compared them with the theoretical and experimental results reported in the literature. It was discovered that functional: LDA, PBEsol, AM05 and RTPSS provide the best results to calculate the lattice parameters (a) and bulk modulus ($B_{0}$); while for the cohesive energy ($E_{\operatorname{coh}}$), functional: AM05, RTPSS and PW91 are closer to the values obtained experimentally. The MBJ, Rtpss and AM05 values found for the band gap energy is slightly underestimated with those values reported experimentally.
Received: 03.02.2016
Accepted: 01.03.2016
English version:
Semiconductors, 2016, Volume 50, Issue 10, Pages 1280–1286
DOI: https://doi.org/10.1134/S1063782616100110
Bibliographic databases:
Document Type: Article
Language: English
Citation: E.-E. Castaño-González, N. Seña, V. Mendoza-Estrada, R. González-Hernández, A. Dussan, F. Mesa, “First-principles calculations of the electronic and structural properties of GaSb”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1303–1308; Semiconductors, 50:10 (2016), 1280–1286
Citation in format AMSBIB
\Bibitem{CasSenMen16}
\by E.-E.~Casta\~no-Gonz\'alez, N.~Se\~na, V.~Mendoza-Estrada, R.~Gonz\'alez-Hern\'andez, A.~Dussan, F.~Mesa
\paper First-principles calculations of the electronic and structural properties of GaSb
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 10
\pages 1303--1308
\mathnet{http://mi.mathnet.ru/phts6330}
\elib{https://elibrary.ru/item.asp?id=27369004}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 10
\pages 1280--1286
\crossref{https://doi.org/10.1134/S1063782616100110}
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  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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