|
Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1513–1518
(Mi phts6317)
|
|
|
|
This article is cited in 2 scientific papers (total in 2 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes
V. T. Shamirzaeva, V. A. Gaislerab, T. S. Shamirzaevbc a Novosibirsk State Technical University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Ural Federal University, Ekaterinburg
Abstract:
The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
V. T. Shamirzaev, V. A. Gaisler, T. S. Shamirzaev, “Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1513–1518; Semiconductors, 50:11 (2016), 1493–1498
Linking options:
https://www.mathnet.ru/eng/phts6317 https://www.mathnet.ru/eng/phts/v50/i11/p1513
|
Statistics & downloads: |
Abstract page: | 37 | Full-text PDF : | 16 |
|