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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1479–1483
(Mi phts6311)
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XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon
R. Kh. Zhukavina, K. A. Kovalevskya, M. L. Orlova, V. V. Tsyplenkova, H.-W. Hübersbc, N. Dessmannc, D. V. Kozlova, V. N. Shastinda a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b DLR Institute of Optical Sensor Systems, Berlin, Germany
c Humboldt-Universität zu Berlin, Institut für Physik, Berlin, Germany
d Lobachevsky State University of Nizhny Novgorod
Abstract:
Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO$_2$ laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by $A^+$ centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
R. Kh. Zhukavin, K. A. Kovalevsky, M. L. Orlov, V. V. Tsyplenkov, H.-W. Hübers, N. Dessmann, D. V. Kozlov, V. N. Shastin, “Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1479–1483; Semiconductors, 50:11 (2016), 1458–1462
Linking options:
https://www.mathnet.ru/eng/phts6311 https://www.mathnet.ru/eng/phts/v50/i11/p1479
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