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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1473–1478
(Mi phts6310)
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This article is cited in 1 scientific paper (total in 1 paper)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
On the crystal structure and thermoelectric properties of thin MnSi$_{x}$ films
I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, A. V. Zdoroveyshchev, A. V. Kudrin, D. A. Pavlov, Yu. V. Usov Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
Thin (25 nm) Si$_{1-x}$Mn$_{x}$/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
I. V. Erofeeva, M. V. Dorokhin, V. P. Lesnikov, A. V. Zdoroveyshchev, A. V. Kudrin, D. A. Pavlov, Yu. V. Usov, “On the crystal structure and thermoelectric properties of thin MnSi$_{x}$ films”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1473–1478; Semiconductors, 50:11 (2016), 1453–1457
Linking options:
https://www.mathnet.ru/eng/phts6310 https://www.mathnet.ru/eng/phts/v50/i11/p1473
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Abstract page: | 37 | Full-text PDF : | 5 |
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