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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11, Pages 1445–1450
(Mi phts6304)
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This article is cited in 10 scientific papers (total in 10 papers)
XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields
R. M. Balagula, M. Ya. Vinnichenko, I. S. Makhov, D. A. Firsov, L. E. Vorob'ev Peter the Great St. Petersburg Polytechnic University
Abstract:
The effect of a lateral electric field on the mid-infrared absorption and interband photoluminescence spectra in double tunnel-coupled GaAs/AlGaAs quantum wells is studied. The results obtained are explained by the redistribution of hot electrons between quantum wells and changes in the space charge in the structure. The hot carrier temperature is determined by analyzing the intersubband light absorption and interband photoluminescence modulation spectra under strong lateral electric fields.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
R. M. Balagula, M. Ya. Vinnichenko, I. S. Makhov, D. A. Firsov, L. E. Vorob'ev, “Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1445–1450; Semiconductors, 50:11 (2016), 1425–1430
Linking options:
https://www.mathnet.ru/eng/phts6304 https://www.mathnet.ru/eng/phts/v50/i11/p1445
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Abstract page: | 45 | Full-text PDF : | 13 |
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