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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1669–1674 (Mi phts6291)  
This article is cited in 2 scientific papers (total in 2 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures

S. V. Gudinaa, Yu. G. Arapova, A. P. Savelyeva, V. N. Neverova, S. M. Podgornykhab, N. G. Shelushininaa, M. V. Yakuninab, I. S. Vasil'evskiic, A. N. Vinichenkoc

a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
c National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (281 kB) Citations (2)
Abstract: The longitudinal and Hall magnetoresistances are measured in the quantum Hall effect regime in the $n$-InGaAs/InAlAs heterostructures at temperatures of $T$ = (1.8–30) K in magnetic fields up to $B$ = 9 T. Temperature-induced transport in the region of the longitudinal resistance minima, corresponding to the plateau regions at Hall resistance, is investigated within the framework of the concept of hopping conductivity in a strongly localized electron system. The analysis of variable-range hopping conductivity in the region of the second, third, and fourth plateau of the quantum Hall effect provides the possibility of determining the localization length exponent.
Received: 17.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1641–1646
DOI: https://doi.org/10.1134/S1063782616120071
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. V. Gudina, Yu. G. Arapov, A. P. Savelyev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil'evskii, A. N. Vinichenko, “Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1669–1674; Semiconductors, 50:12 (2016), 1641–1646
Citation in format AMSBIB
\Bibitem{GudAraSav16}
\by S.~V.~Gudina, Yu.~G.~Arapov, A.~P.~Savelyev, V.~N.~Neverov, S.~M.~Podgornykh, N.~G.~Shelushinina, M.~V.~Yakunin, I.~S.~Vasil'evskii, A.~N.~Vinichenko
\paper Quantum Hall effect and hopping conductivity in $n$-InGaAs/InAlAs nanoheterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1669--1674
\mathnet{http://mi.mathnet.ru/phts6291}
\elib{https://elibrary.ru/item.asp?id=27369071}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1641--1646
\crossref{https://doi.org/10.1134/S1063782616120071}
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  • https://www.mathnet.ru/eng/phts/v50/i12/p1669
    • This publication is cited in the following 2 articles:
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