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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1625–1628 (Mi phts6282)  

This article is cited in 3 scientific papers (total in 3 papers)

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection

G. E. Fedorov, T. S. Stepanova, A. Sh. Gazaliev, I. A. Gaiduchenko, N. S. Kaurova, B. M. Voronov, G. N. Gol'tsman

Moscow Pedagogical University, Moscow, Russian Federation, Moscow
Full-text PDF (395 kB) Citations (3)
Abstract: Various asymmetric detecting devices based on carbon nanotubes (CNTs) are studied. The asymmetry is understood as inhomogeneous properties along the conducting channel. In the first type of devices, an inhomogeneous morphology of the CNT grid is used. In the second type of devices, metals with highly varying work functions are used as the contact material. The relation between the sensitivity and detector configuration is analyzed. Based on the data obtained, approaches to the development of an efficient detector of terahertz radiation, based on carbon nanotubes are proposed.
Received: 27.04.2016
Accepted: 10.05.2016
English version:
Semiconductors, 2016, Volume 50, Issue 12, Pages 1600–1603
DOI: https://doi.org/10.1134/S106378261612006X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. E. Fedorov, T. S. Stepanova, A. Sh. Gazaliev, I. A. Gaiduchenko, N. S. Kaurova, B. M. Voronov, G. N. Gol'tsman, “Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1625–1628; Semiconductors, 50:12 (2016), 1600–1603
Citation in format AMSBIB
\Bibitem{FedSteGaz16}
\by G.~E.~Fedorov, T.~S.~Stepanova, A.~Sh.~Gazaliev, I.~A.~Gaiduchenko, N.~S.~Kaurova, B.~M.~Voronov, G.~N.~Gol'tsman
\paper Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 12
\pages 1625--1628
\mathnet{http://mi.mathnet.ru/phts6282}
\elib{https://elibrary.ru/item.asp?id=27369062}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 12
\pages 1600--1603
\crossref{https://doi.org/10.1134/S106378261612006X}
Linking options:
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  • https://www.mathnet.ru/eng/phts/v50/i12/p1625
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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