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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12, Pages 1592–1594
(Mi phts6275)
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XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
On a new method of heterojunction formation in III–V nanowires
N. V. Sibirevab, A. A. Koryakinbc, V. G. Dubrovskiibcde a Peter the Great St. Petersburg Polytechnic University
b Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Ioffe Institute, St. Petersburg
e Saint Petersburg State University
Abstract:
The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor–liquid–solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.
Received: 27.04.2016 Accepted: 10.05.2016
Citation:
N. V. Sibirev, A. A. Koryakin, V. G. Dubrovskii, “On a new method of heterojunction formation in III–V nanowires”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1592–1594; Semiconductors, 50:12 (2016), 1566–1568
Linking options:
https://www.mathnet.ru/eng/phts6275 https://www.mathnet.ru/eng/phts/v50/i12/p1592
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Abstract page: | 43 | Full-text PDF : | 16 |
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