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This article is cited in 1 scientific paper (total in 1 paper)
Manufacturing, processing, testing of materials and structures
PEALD grown high-k ZrO$_{2}$ thin films on SiC group IV compound semiconductor
A. G. Khairnar, V. S. Patil, K. S. Agrawal, P. A. Pandit, R. S. Salunke, A. M. Mahajan Department of Electronics, School of Physical Sciences, North Maharashtra University, Jalgaon, Maharashtra, India
Abstract:
The study of ZrO$_{2}$ thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO$_{2}$ thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO$_{2}$ thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400$^\circ$C. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography & roughness and chemical composition of thin film respectively.
Received: 24.11.2015 Accepted: 08.06.2016
Citation:
A. G. Khairnar, V. S. Patil, K. S. Agrawal, P. A. Pandit, R. S. Salunke, A. M. Mahajan, “PEALD grown high-k ZrO$_{2}$ thin films on SiC group IV compound semiconductor”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 133; Semiconductors, 51:1 (2017), 131–133
Linking options:
https://www.mathnet.ru/eng/phts6270 https://www.mathnet.ru/eng/phts/v51/i1/p133
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