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Manufacturing, processing, testing of materials and structures
Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types
P. V. Seredina, A. S. Len'shina, I. N. Arsent'evb, A. V. Zhabotinskyb, D. N. Nikolaevb, I. S. Tarasovb, V. V. Shamakhovb, Tatiana Prutskijc, Harald Leisted, Monika Rinked a Voronezh State University
b Ioffe Institute, St. Petersburg
c Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Mexico
d Karlsruhe Nano Micro Facility, Eggenstein-Leopoldshafen, Germany
Abstract:
The structural, optical, and energy properties of epitaxial Al$_{x}$Ga$_{1-x}$As : Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al$_{x}$Ga$_{1-x}$As : Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.
Received: 02.06.2016 Accepted: 14.06.2016
Citation:
P. V. Seredin, A. S. Len'shin, I. N. Arsent'ev, A. V. Zhabotinsky, D. N. Nikolaev, I. S. Tarasov, V. V. Shamakhov, Tatiana Prutskij, Harald Leiste, Monika Rinke, “Epitaxial Al$_{x}$Ga$_{1-x}$As : Mg alloys with different conductivity types”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 124–132; Semiconductors, 51:1 (2017), 122–130
Linking options:
https://www.mathnet.ru/eng/phts6269 https://www.mathnet.ru/eng/phts/v51/i1/p124
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Abstract page: | 29 | Full-text PDF : | 11 |
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