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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 1, Pages 75–78
DOI: https://doi.org/10.21883/FTP.2017.01.43999.8258 (Mi phts6261) 		 
Semiconductor physics

Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate

S. M. Nekorkina, B. N. Zvonkova, N. V. Baidusa, N. V. Dikarevaa, O. V. Vikhrovaa, A. A. Afonenkob, D. V. Ushakovb

a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Belarusian State University, Minsk
Full-text PDF (227 kB)
DOI: https://doi.org/10.21883/FTP.2017.01.43999.8258
Abstract: The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.
Received: 05.04.2016
Accepted: 12.04.2016
English version:
Semiconductors, 2017, Volume 51, Issue 1, Pages 73–77
DOI: https://doi.org/10.1134/S1063782617010158
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. M. Nekorkin, B. N. Zvonkov, N. V. Baidus, N. V. Dikareva, O. V. Vikhrova, A. A. Afonenko, D. V. Ushakov, “Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 75–78; Semiconductors, 51:1 (2017), 73–77
Citation in format AMSBIB
\Bibitem{NekZvoBai17}
\by S.~M.~Nekorkin, B.~N.~Zvonkov, N.~V.~Baidus, N.~V.~Dikareva, O.~V.~Vikhrova, A.~A.~Afonenko, D.~V.~Ushakov
\paper Effect of active-region ``volume'' on the radiative properties of laser heterostructures with radiation output through the substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 1
\pages 75--78
\mathnet{http://mi.mathnet.ru/phts6261}
\crossref{https://doi.org/10.21883/FTP.2017.01.43999.8258}
\elib{https://elibrary.ru/item.asp?id=28969409}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 1
\pages 73--77
\crossref{https://doi.org/10.1134/S1063782617010158}
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