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This article is cited in 7 scientific papers (total in 7 papers)
Surface, interfaces, thin films
On the growth, structure, and surface morphology of epitaxial CdTe films
I. R. Nurieva, M. A. Mehrabovab, A. M. Nazarova, R. M. Sadigova, N. G. Hasanovc a Abdullayev Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan
b Institute of Radiation Problems, Azerbaijan National Academy of Sciences, Baku, Azerbaijan
c Baku State University
Abstract:
The structure and surface morphology of epitaxial CdTe films grown on glassy substrates with and without compensation with an additional Te vapor source during growth are studied. The optimal conditions of the production of structurally perfect epitaxial films with a pure smooth surface with no inclusions of another phase ($T_{\operatorname{so}}$ = 1000–1100 K, $T_{\operatorname{su}}$ = 570–670 K) are determined. It is established that, on glassy substrates, the epitaxial films grow via the (111) plane of the face-centered cubic (fcc) lattice with the parameter $a$ = 6.481 $\mathring{\mathrm{A}}$. By varying the temperature of the main and compensating sources, CdTe films with $n$- and $p$-type conductivity are produced.
Received: 28.04.2015 Accepted: 18.05.2016
Citation:
I. R. Nuriev, M. A. Mehrabova, A. M. Nazarov, R. M. Sadigov, N. G. Hasanov, “On the growth, structure, and surface morphology of epitaxial CdTe films”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 36–39; Semiconductors, 51:1 (2017), 34–37
Linking options:
https://www.mathnet.ru/eng/phts6254 https://www.mathnet.ru/eng/phts/v51/i1/p36
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