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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 1, Pages 26–35
DOI: https://doi.org/10.21883/FTP.2017.01.43991.8226
(Mi phts6253)
 

This article is cited in 4 scientific papers (total in 4 papers)

Surface, interfaces, thin films

Atomic and electronic structure of the CdTe (111)$B$–(2$\sqrt{3}\times4$) orthogonal surface

V. L. Bekenev, S. M. Zubkova

Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev
Abstract: The atomic and electronic structure of four variants of Te-terminated CdTe (111)$B$–(2$\sqrt{3}\times4$) orthogonal polar surface (ideal, relaxed, reconstructed, and reconstructed with subsequent relaxation) are calculated ab initio for the first time. The surface is modeled by a film composed of 12 atomic layers with a vacuum gap of $\sim$16 $\mathring{\mathrm{A}}$ in the layered superlattice approximation. To close Cd dangling bonds on the opposite side of the film, 24 fictitious hydrogen atoms with a charge of 1.5 electrons each are added. Ab initio calculations are performed using the Quantum Espresso program based on density functional theory. It is demonstrated that relaxation leads to splitting of the four upper layers. The band energy structures and total and layer-by-layer densities of electronic states for the four surface variants are calculated and analyzed.
Received: 01.03.2016
Accepted: 29.03.2016
English version:
Semiconductors, 2017, Volume 51, Issue 1, Pages 23–33
DOI: https://doi.org/10.1134/S106378261701002X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. L. Bekenev, S. M. Zubkova, “Atomic and electronic structure of the CdTe (111)$B$–(2$\sqrt{3}\times4$) orthogonal surface”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 26–35; Semiconductors, 51:1 (2017), 23–33
Citation in format AMSBIB
\Bibitem{BekZub17}
\by V.~L.~Bekenev, S.~M.~Zubkova
\paper Atomic and electronic structure of the CdTe (111)$B$--(2$\sqrt{3}\times4$) orthogonal surface
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 1
\pages 26--35
\mathnet{http://mi.mathnet.ru/phts6253}
\crossref{https://doi.org/10.21883/FTP.2017.01.43991.8226}
\elib{https://elibrary.ru/item.asp?id=28969401}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 1
\pages 23--33
\crossref{https://doi.org/10.1134/S106378261701002X}
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  • https://www.mathnet.ru/eng/phts/v51/i1/p26
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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