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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 1, Pages 22–25
DOI: https://doi.org/10.21883/FTP.2017.01.43990.8274 (Mi phts6252) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Electronic properties of semiconductors

Lifetime of excess electrons in Cu–Zn–Sn–Se powders

G. F. Novikova, M. V. Gapanovicha, V. F. Gremenokb, K. V. Bocharova, W.-T. Tsaic, Ming-Jer Jengc, Liann-Be Changc

a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
b Scientific-Practical Materials Research Centre of NAS of Belarus, Minsk, Republic of Belarus
c Chang Gung University, Taoyuan, Taiwan
Full-text PDF (194 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2017.01.43990.8274
Abstract: The method of time-resolved microwave photoconductivity at a frequency of 36 GHz in the range of temperatures of 200–300 K is used to study the kinetics of the annihilation of charge carriers in Cu–Zn–Sn–Se powders obtained by the solid-phase method of synthesis in cells. The lifetime of excess electrons at room temperature is found to be shorter than 5 ns. The activation energy for the process of recombination amounted to $E_{a}$ $\sim$ 0.054 eV.
Received: 13.04.2016
Accepted: 28.04.2016
English version:
Semiconductors, 2017, Volume 51, Issue 1, Pages 18–22
DOI: https://doi.org/10.1134/S1063782617010171
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. F. Novikov, M. V. Gapanovich, V. F. Gremenok, K. V. Bocharov, W.-T. Tsai, Ming-Jer Jeng, Liann-Be Chang, “Lifetime of excess electrons in Cu–Zn–Sn–Se powders”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 22–25; Semiconductors, 51:1 (2017), 18–22
Citation in format AMSBIB
\Bibitem{NovGapGre17}
\by G.~F.~Novikov, M.~V.~Gapanovich, V.~F.~Gremenok, K.~V.~Bocharov, W.-T.~Tsai, Ming-Jer~Jeng, Liann-Be~Chang
\paper Lifetime of excess electrons in Cu--Zn--Sn--Se powders
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 1
\pages 22--25
\mathnet{http://mi.mathnet.ru/phts6252}
\crossref{https://doi.org/10.21883/FTP.2017.01.43990.8274}
\elib{https://elibrary.ru/item.asp?id=28969400}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 1
\pages 18--22
\crossref{https://doi.org/10.1134/S1063782617010171}
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  • https://www.mathnet.ru/eng/phts/v51/i1/p22
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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