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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Page 281
DOI: https://doi.org/10.21883/FTP.2017.02.44119.8302 (Mi phts6247) 		 
This article is cited in 1 scientific paper (total in 1 paper)

Papers published in the English version of the journal

The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures $n$-InGaAs/GaAs after IR-illumination

Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin

Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg, Russia
Full-text PDF (28 kB) Citations (1)
DOI: https://doi.org/10.21883/FTP.2017.02.44119.8302
Abstract: The dependences of the longitudinal and Hall resistances on a magnetic field in $n$-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields $B$ = 0–16 T and temperatures $T$ = 0.05–4.2 K.
Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.
Received: 26.04.2016
Accepted: 20.06.2016
English version:
Semiconductors, 2017, Volume 51, Issue 2, Pages 272–278
DOI: https://doi.org/10.1134/S1063782617020026
Bibliographic databases:
Document Type: Article
Language: English
Citation: Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin, “The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures $n$-InGaAs/GaAs after IR-illumination”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 281; Semiconductors, 51:2 (2017), 272–278
Citation in format AMSBIB
\Bibitem{AraGudKle17}
\by Yu.~G.~Arapov, S.~V.~Gudina, A.~S.~Klepikova, V.~N.~Neverov, G.~I.~Harus, N.~G.~Shelushinina, M.~V.~Yakunin
\paper The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures $n$-InGaAs/GaAs after IR-illumination
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 281
\mathnet{http://mi.mathnet.ru/phts6247}
\crossref{https://doi.org/10.21883/FTP.2017.02.44119.8302}
\elib{https://elibrary.ru/item.asp?id=29006013}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 2
\pages 272--278
\crossref{https://doi.org/10.1134/S1063782617020026}
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  • https://www.mathnet.ru/eng/phts/v51/i2/p281
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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