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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Pages 234–239
DOI: https://doi.org/10.21883/FTP.2017.02.44111.8335 (Mi phts6239) 		 
Semiconductor physics

Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors

S. N. Yurkova, T. T. Ìnatsakanova, M. E. Levinshteĭnb, A. G. Tandoeva, J. W. Palmourc

a Russian Electrotechnical Institute Named after V. I. Lenin
b Ioffe Institute, St. Petersburg
c Wolfspeed, USA
Full-text PDF (137 kB)
DOI: https://doi.org/10.21883/FTP.2017.02.44111.8335
Abstract: The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4$H$-SiC thyristors is considered. It is shown that a new switching mechanism implemented in 4$H$-SiC thyristors results in the dependence of the gate switch-on current on the thyristor parameters, with this dependence being fundamentally different from that in conventional silicon thyristors.
Received: 24.05.2016
Accepted: 14.06.2016
English version:
Semiconductors, 2017, Volume 51, Issue 2, Pages 225–231
DOI: https://doi.org/10.1134/S1063782617020257
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. N. Yurkov, T. T. Ìnatsakanov, M. E. Levinshteǐn, A. G. Tandoev, J. W. Palmour, “Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 234–239; Semiconductors, 51:2 (2017), 225–231
Citation in format AMSBIB
\Bibitem{YurÌnaLev17}
\by S.~N.~Yurkov, T.~T.~Ìnatsakanov, M.~E.~Levinshte{\v\i}n, A.~G.~Tandoev, J.~W.~Palmour
\paper Analysis of the impact of non-1D effects on the gate switch-on current in 4$H$-SiC thyristors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 234--239
\mathnet{http://mi.mathnet.ru/phts6239}
\crossref{https://doi.org/10.21883/FTP.2017.02.44111.8335}
\elib{https://elibrary.ru/item.asp?id=29006003}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 2
\pages 225--231
\crossref{https://doi.org/10.1134/S1063782617020257}
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  • https://www.mathnet.ru/eng/phts/v51/i2/p234
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