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This article is cited in 5 scientific papers (total in 5 papers)
Electronic properties of semiconductors
Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields
A. I. Veingera, T. V. Tisneka, I. V. Kochmana, V. I. Okulovb a Ioffe Institute, St. Petersburg
b Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
Abstract:
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate conduction band are analyzed. The special features of experiments carried out in the investigated frequency range are noted. The momentum and electron-energy relaxation times are determined from the experimental field and temperature dependences.
Received: 28.06.2016 Accepted: 03.07.2016
Citation:
A. I. Veinger, T. V. Tisnek, I. V. Kochman, V. I. Okulov, “Magnetic-field-dependent microwave absorption in HgSe in weak magnetic fields”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 172–176; Semiconductors, 51:2 (2017), 163–167
Linking options:
https://www.mathnet.ru/eng/phts6227 https://www.mathnet.ru/eng/phts/v51/i2/p172
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