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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 2, Pages 166–171
DOI: https://doi.org/10.21883/FTP.2017.02.44098.8166
(Mi phts6226)
 

This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Field diffusion in disordered organic materials under conditions of occupied deep states

V. R. Nikitenko, A. Yu. Kudrov

National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (123 kB) Citations (1)
Abstract: A simple analytical model of the field-diffusion coefficient is developed for moderate carrier concentrations. Hopping transport is described by the multiple-trapping model based on the transport-level concept. A continuity equation with a diffusion coefficient depending on carrier concentration is obtained, the time dependence of the field-diffusion coefficient under non-steady-state conditions is found. The time intervals in which deep state population affects the mobility and diffusion coefficient under conditions of time-of-flight experiments are estimated. It is shown that the field-diffusion coefficient increases in a long time interval while the mobility is unchanged, which is reminiscent of a similar case of nonequilibrium initial carrier generation at the low-concentration limit.
Received: 16.05.2016
Accepted: 16.06.2016
English version:
Semiconductors, 2017, Volume 51, Pages 158–162
DOI: https://doi.org/10.1134/S1063782617020129
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. R. Nikitenko, A. Yu. Kudrov, “Field diffusion in disordered organic materials under conditions of occupied deep states”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 166–171; Semiconductors, 51 (2017), 158–162
Citation in format AMSBIB
\Bibitem{NikKud17}
\by V.~R.~Nikitenko, A.~Yu.~Kudrov
\paper Field diffusion in disordered organic materials under conditions of occupied deep states
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 2
\pages 166--171
\mathnet{http://mi.mathnet.ru/phts6226}
\crossref{https://doi.org/10.21883/FTP.2017.02.44098.8166}
\elib{https://elibrary.ru/item.asp?id=29005987}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\pages 158--162
\crossref{https://doi.org/10.1134/S1063782617020129}
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  • https://www.mathnet.ru/eng/phts/v51/i2/p166
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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