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This article is cited in 1 scientific paper (total in 1 paper)
Electronic properties of semiconductors
Field diffusion in disordered organic materials under conditions of occupied deep states
V. R. Nikitenko, A. Yu. Kudrov National Engineering Physics Institute "MEPhI", Moscow
Abstract:
A simple analytical model of the field-diffusion coefficient is developed for moderate carrier concentrations. Hopping transport is described by the multiple-trapping model based on the transport-level concept. A continuity equation with a diffusion coefficient depending on carrier concentration is obtained, the time dependence of the field-diffusion coefficient under non-steady-state conditions is found. The time intervals in which deep state population affects the mobility and diffusion coefficient under conditions of time-of-flight experiments are estimated. It is shown that the field-diffusion coefficient increases in a long time interval while the mobility is unchanged, which is reminiscent of a similar case of nonequilibrium initial carrier generation at the low-concentration limit.
Received: 16.05.2016 Accepted: 16.06.2016
Citation:
V. R. Nikitenko, A. Yu. Kudrov, “Field diffusion in disordered organic materials under conditions of occupied deep states”, Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 166–171; Semiconductors, 51 (2017), 158–162
Linking options:
https://www.mathnet.ru/eng/phts6226 https://www.mathnet.ru/eng/phts/v51/i2/p166
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