Effect of energy density on the target on SnO$_{2}$ : Sb film properties when using a high-speed particle separator

SnO$_{2}$ thin films are grown by pulsed laser deposition with high-speed particle separation on quartz-glass substrates without post-deposition annealing under different deposition conditions in the range of the energy densities on the target from 3.4 to 6.8 J/cm$^2$. Their optical, structural, and electrical properties are studied. It is found that the energy density on the target affects the SnO$_{2}$:Sb film conductivity and transmittance. The optimum conditions of film growth by the droplet-free pulsed laser deposition method are determined. A resistivity minimum of 1.2 $\times$ 10$^{-3}$ $\Omega$ cm is observed at an energy density on the target of 4.6 J/cm$^2$, a substrate temperature of 300°C, and an oxygen pressure of 20 mTorr in the vacuum chamber during deposition.