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This article is cited in 2 scientific papers (total in 2 papers)
Manufacturing, processing, testing of materials and structures
Properties of ZnO : Er$^{3+}$ films obtained by the sol–gel method
V. V. Malyutina-Bronskayaa, A. V. Semchenkob, V. V. Sidskyb, V. E. Fedorovc a State Scientific and Production Association 'Optics, Optoelectronics and Laser Technology', National Academy of Sciences of Belarus, Minsk
b Gomel State University named after Francisk Skorina
c Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
Abstract:
Polycrystalline and single-phase ZnO : Er$^{3+}$ films are synthesized by the sol–gel method (based on different types of solvents) on surfaces of single-crystal silicon and glass. The electrical measurement data (current–voltage and capacitance–voltage characteristics) show that these ZnO:Al:Er$^{3+}$ films are photosensitive. The introduction of Er$^{3+}$ rare-earth ions into a zinc-oxide film manifests itself in photosensitivity of the current–voltage and capacitance–voltage characteristics to light in the visible and infrared (IR) spectral ranges. The results of this study indicate that ZnO:Al:Er$^{3+}$ films synthesized by the sol–gel method can be used to design optoelectronic devices, in particular, to form solar–cell active layers.
Received: 26.07.2016 Accepted: 27.07.2016
Citation:
V. V. Malyutina-Bronskaya, A. V. Semchenko, V. V. Sidsky, V. E. Fedorov, “Properties of ZnO : Er$^{3+}$ films obtained by the sol–gel method”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 409–413; Semiconductors, 51:3 (2017), 392–395
Linking options:
https://www.mathnet.ru/eng/phts6219 https://www.mathnet.ru/eng/phts/v51/i3/p409
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