Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions

The I–V characteristics of NiO/CdTe heterostructures fabricated by reactive magnetron sputtering are measured at different temperatures. It is established that current transport through the NiO/CdTe heterojunction is mainly controlled via generation–recombination and tunneling under forward bias and via tunneling under reverse bias. The investigated heterostructures generate an open-circuit voltage of $V_{oc}$ = 0.26 V and a short-circuit current density of $I_{sc}$ = 58.7 $\mu$A/cm$^2$ at an illumination intensity of 80 mW/cm$^2$.