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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 3, Pages 335–338
DOI: https://doi.org/10.21883/FTP.2017.03.44203.8398
(Mi phts6205)
 

This article is cited in 2 scientific papers (total in 2 papers)

Spectroscopy, interaction with radiation

Radiative $d$$d$ transitions at tungsten centers in II–VI semiconductors

V. V. Ushakov, V. S. Krivobok, A. A. Pruchkina

P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow
Full-text PDF (113 kB) Citations (2)
Abstract: The luminescence spectra of W impurity centers in II–VI semiconductors, specifically, ZnSe, CdS, and CdSe, are studied. It is found that, if the electron system of 5$d$ (W) centers is considered instead of the electron system of 3$d$ (Cr) centers, the spectral characteristics of the impurity radiation are substantially changed. The electron transitions are identified in accordance with Tanabe–Sugano diagrams of crystal field theory. With consideration for the specific features of the spectra, it is established that, in the crystals under study, radiative transitions at 5$d$ W centers occur between levels with different spins in the region of a weak crystal field.
Received: 06.09.2016
Accepted: 19.09.2016
English version:
Semiconductors, 2017, Volume 51, Issue 3, Pages 322–325
DOI: https://doi.org/10.1134/S1063782617030253
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Ushakov, V. S. Krivobok, A. A. Pruchkina, “Radiative $d$$d$ transitions at tungsten centers in II–VI semiconductors”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 335–338; Semiconductors, 51:3 (2017), 322–325
Citation in format AMSBIB
\Bibitem{UshKriPru17}
\by V.~V.~Ushakov, V.~S.~Krivobok, A.~A.~Pruchkina
\paper Radiative $d$--$d$ transitions at tungsten centers in II--VI semiconductors
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 3
\pages 335--338
\mathnet{http://mi.mathnet.ru/phts6205}
\crossref{https://doi.org/10.21883/FTP.2017.03.44203.8398}
\elib{https://elibrary.ru/item.asp?id=29006023}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 3
\pages 322--325
\crossref{https://doi.org/10.1134/S1063782617030253}
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  • https://www.mathnet.ru/eng/phts/v51/i3/p335
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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