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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 3, Pages 302–304
DOI: https://doi.org/10.21883/FTP.2017.03.44197.8315
(Mi phts6199)
 

Electronic properties of semiconductors

Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength

V. F. Bannaya

Moscow Pedagogical University, Moscow, Russian Federation, Moscow
Abstract: It is shown that measurement of the electric-breakdown field $E_{\operatorname{br}}$ in a classically high magnetic field $(H)$ at $T$ = 4.2 K makes it possible to determine the value of the degree of compensation $K$ in pure germanium with $K<$ 50% much more precisely than at $H$ = 0. The parameter $S=E_{\operatorname{br}}/H$ is introduced and its dependence $S = f(K)$ is calculated; the obtained curve makes it possible to determine $K$ if $H$ and $E_{\operatorname{br}}$ are known. To decrease the resistance of the samples, it is recommended that measurements be carried out under “impurity” illumination. It is shown that the value of $E_{\operatorname{br}}$ is invariable at low intensities of such excitation.
Received: 10.05.2016
Accepted: 16.05.2016
English version:
Semiconductors, 2017, Volume 51, Issue 3, Pages 290–292
DOI: https://doi.org/10.1134/S1063782617030046
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. F. Bannaya, “Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 302–304; Semiconductors, 51:3 (2017), 290–292
Citation in format AMSBIB
\Bibitem{Ban17}
\by V.~F.~Bannaya
\paper Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 3
\pages 302--304
\mathnet{http://mi.mathnet.ru/phts6199}
\crossref{https://doi.org/10.21883/FTP.2017.03.44197.8315}
\elib{https://elibrary.ru/item.asp?id=29006016}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 3
\pages 290--292
\crossref{https://doi.org/10.1134/S1063782617030046}
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