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Electronic properties of semiconductors
Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength
V. F. Bannaya Moscow Pedagogical University, Moscow, Russian Federation, Moscow
Abstract:
It is shown that measurement of the electric-breakdown field $E_{\operatorname{br}}$ in a classically high magnetic field $(H)$ at $T$ = 4.2 K makes it possible to determine the value of the degree of compensation $K$ in pure germanium with $K<$ 50% much more precisely than at $H$ = 0. The parameter $S=E_{\operatorname{br}}/H$ is introduced and its dependence $S = f(K)$ is calculated; the obtained curve makes it possible to determine $K$ if $H$ and $E_{\operatorname{br}}$ are known. To decrease the resistance of the samples, it is recommended that measurements be carried out under “impurity” illumination. It is shown that the value of $E_{\operatorname{br}}$ is invariable at low intensities of such excitation.
Received: 10.05.2016 Accepted: 16.05.2016
Citation:
V. F. Bannaya, “Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 302–304; Semiconductors, 51:3 (2017), 290–292
Linking options:
https://www.mathnet.ru/eng/phts6199 https://www.mathnet.ru/eng/phts/v51/i3/p302
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Statistics & downloads: |
Abstract page: | 29 | Full-text PDF : | 8 |
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