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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 4, Pages 551–557
DOI: https://doi.org/10.21883/FTP.2017.04.44351.8401 (Mi phts6193) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Manufacturing, processing, testing of materials and structures

In InAs$_{1-x}$Sb$_{x}$ heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

R. R. Guseinova, V. A. Tanriverdiyeva, G. Kipshidzeb, E. N. Aliyevaa, Kh. V. Aliguliyevaa, N. A. Abdullaeva, N. T. Mamedova

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Stony Brook University, New York, USA
Full-text PDF (849 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2017.04.44351.8401
Abstract: Unrelaxed InAs$_{1-x}$Sb$_{x}$ ($x$ = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs$_{1-x}$Sb$_{x}$ alloys is established.
Received: 07.09.2016
Accepted: 19.09.2016
English version:
Semiconductors, 2017, Volume 51, Issue 4, Pages 524–530
DOI: https://doi.org/10.1134/S1063782617040066
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. R. Guseinov, V. A. Tanriverdiyev, G. Kipshidze, E. N. Aliyeva, Kh. V. Aliguliyeva, N. A. Abdullaev, N. T. Mamedov, “In InAs$_{1-x}$Sb$_{x}$ heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 551–557; Semiconductors, 51:4 (2017), 524–530
Citation in format AMSBIB
\Bibitem{GusTanKip17}
\by R.~R.~Guseinov, V.~A.~Tanriverdiyev, G.~Kipshidze, E.~N.~Aliyeva, Kh.~V.~Aliguliyeva, N.~A.~Abdullaev, N.~T.~Mamedov
\paper In InAs$_{1-x}$Sb$_{x}$ heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 4
\pages 551--557
\mathnet{http://mi.mathnet.ru/phts6193}
\crossref{https://doi.org/10.21883/FTP.2017.04.44351.8401}
\elib{https://elibrary.ru/item.asp?id=29404900}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 4
\pages 524--530
\crossref{https://doi.org/10.1134/S1063782617040066}
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  • https://www.mathnet.ru/eng/phts/v51/i4/p551
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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