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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 4, Pages 497–500
DOI: https://doi.org/10.21883/FTP.2017.04.44341.8290
(Mi phts6183)
 

This article is cited in 15 scientific papers (total in 15 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Ab initio calculations of the electron spectrum and density of states of TlFeS$_{2}$ and TlFeSe$_{2}$ crystals

N. A. Ismayilovaa, G. S. Orudzhevab, S. H. Jabarovab

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Azerbaijan Technical University, Baku
Abstract: The results of ab initio calculations of the electron spectrum of TlFeS$_{2}$ and TlFeSe$_{2}$ crystals in the antiferromagnetic phase are reported. Calculations are carried out in the context of the density functional theory. The origin of the bands of $s$, $p$, and $d$ electron states of Tl, Fe, S, and Se atoms is studied. It is established that, in the antiferromagnetic phase, the crystals possess semiconductor properties. The band gaps are found to be 0.05 and 0.34 eV for TlFeS$_{2}$ and TlFeSe$_{2}$ crystals, respectively.
Received: 20.09.2016
Accepted: 30.09.2016
English version:
Semiconductors, 2017, Volume 51, Issue 4, Pages 473–476
DOI: https://doi.org/10.1134/S1063782617040078
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Ismayilova, G. S. Orudzhev, S. H. Jabarov, “Ab initio calculations of the electron spectrum and density of states of TlFeS$_{2}$ and TlFeSe$_{2}$ crystals”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 497–500; Semiconductors, 51:4 (2017), 473–476
Citation in format AMSBIB
\Bibitem{IsmOruJab17}
\by N.~A.~Ismayilova, G.~S.~Orudzhev, S.~H.~Jabarov
\paper Ab initio calculations of the electron spectrum and density of states of TlFeS$_{2}$ and TlFeSe$_{2}$ crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 4
\pages 497--500
\mathnet{http://mi.mathnet.ru/phts6183}
\crossref{https://doi.org/10.21883/FTP.2017.04.44341.8290}
\elib{https://elibrary.ru/item.asp?id=29404890}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 4
\pages 473--476
\crossref{https://doi.org/10.1134/S1063782617040078}
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  • https://www.mathnet.ru/eng/phts/v51/i4/p497
  • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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