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Semiconductor structures, low-dimensional systems, quantum phenomena
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling
M. I. Vexlera, Yu. Yu. Illarionovab, I. V. Grekhova a Ioffe Institute, St. Petersburg
b Technische Universität Wien, Institut für Mikroelektronik, Vienna, Austria
Abstract:
The prerequisites for electron storage in the quantum well of a metal–oxide–$p^+$-Si resonant-tunneling structure and the effect of the stored charge on the voltage distribution are theoretically investigated. Systems with SiO$_2$, HfO$_2$, and TiO$_2$ insulators are studied. It is demonstrated that the occurrence of a charge in the well in the case of resonant transport can be expected in structures on substrates with an acceptor concentration from (5–6) $\times$ 10$^{18}$ to (2–3) $\times$ 10$^{19}$ cm$^{-3}$ in the range of oxide thicknesses dependent on this concentration. In particular, the oxide layer thickness in the structures with SiO$_2/p^+$–Si(10$^{19}$ cm$^{-3}$) should exceed $\sim$3 nm. The electron density in the well can reach $\sim$10$^{12}$ cm$^{-2}$ and higher. However, the effect of this charge on the electrostatics of the structure becomes noticeable only at relatively high voltages far above the activation of resonant transport through the first subband.
Received: 01.11.2016 Accepted: 10.11.2016
Citation:
M. I. Vexler, Yu. Yu. Illarionov, I. V. Grekhov, “Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling”, Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 467–471; Semiconductors, 51:4 (2017), 444–448
Linking options:
https://www.mathnet.ru/eng/phts6179 https://www.mathnet.ru/eng/phts/v51/i4/p467
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Abstract page: | 37 | Full-text PDF : | 12 |
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