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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 5, Pages 676–679
DOI: https://doi.org/10.21883/FTP.2017.05.44428.8427 (Mi phts6166) 		 
This article is cited in 17 scientific papers (total in 17 papers)

Semiconductor physics

Laser ($\lambda$ = 809 nm) power converter based on GaAs

V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina

Ioffe Institute, St. Petersburg
Full-text PDF (503 kB) Citations (17)
DOI: https://doi.org/10.21883/FTP.2017.05.44428.8427
Abstract: Laser-power converters with a wavelength of $\lambda$ = 809 nm are fabricated on the basis of single-junction AlGaAs/GaAs heterostructures grown by the method of liquid-phase epitaxy (LPE). Photovoltaic modules with an operating voltage of 4 V for converting radiation of various densities are developed and tested. Two approaches—without the use of optical concentrating systems and with the use of Fresnel lenses are investigated. A monochromatic conversion efficiency exceeding 44% is attained with a photovoltaic module based on 64 laser-radiation converters 0.04 cm$^2$ in area and a concentrating system made of a quartz-lens matrix.
Received: 13.10.2016
Accepted: 18.10.2016
English version:
Semiconductors, 2017, Volume 51, Issue 5, Pages 645–648
DOI: https://doi.org/10.1134/S1063782617050128
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina, “Laser ($\lambda$ = 809 nm) power converter based on GaAs”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 676–679; Semiconductors, 51:5 (2017), 645–648
Citation in format AMSBIB
\Bibitem{KhvSorPot17}
\by V.~P.~Khvostikov, S.~V.~Sorokina, N.~S.~Potapovich, O.~A.~Khvostikova, N.~Kh.~Timoshina
\paper Laser ($\lambda$ = 809 nm) power converter based on GaAs
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 5
\pages 676--679
\mathnet{http://mi.mathnet.ru/phts6166}
\crossref{https://doi.org/10.21883/FTP.2017.05.44428.8427}
\elib{https://elibrary.ru/item.asp?id=29404923}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 5
\pages 645--648
\crossref{https://doi.org/10.1134/S1063782617050128}
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  • https://www.mathnet.ru/eng/phts/v51/i5/p676
    • This publication is cited in the following 17 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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