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This article is cited in 1 scientific paper (total in 1 paper)
Micro- and nanocrystalline, porous, composite semiconductors
On the photoconductivity of TlInSe$_{2}$
N. D. Ismailov, Ch. I. Abilov, M. S. Gasanova Azerbaijan Technical University, Baku
Abstract:
The current–voltage (I–V) and photocurrent–light intensity $(I_{pc}-\Phi)$ characteristics and the photoconductivity relaxation kinetics of TlInSe$_{2}$ single crystals are investigated. Anomalously long relaxation times ($\tau\approx$ 10$^{3}$ s) and some other specific features of the photoconductivity are observed, which are explained within the barrier theory of inhomogeneous semiconductors. The heights of the drift and recombination barriers are found to be, respectively, $E_{dr}\approx$ 0.1 eV and $E_{r}\approx$ 0.45 eV.
Received: 25.04.2016 Accepted: 28.09.2016
Citation:
N. D. Ismailov, Ch. I. Abilov, M. S. Gasanova, “On the photoconductivity of TlInSe$_{2}$”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 663–666; Semiconductors, 51:5 (2017), 632–635
Linking options:
https://www.mathnet.ru/eng/phts6163 https://www.mathnet.ru/eng/phts/v51/i5/p663
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