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This article is cited in 3 scientific papers (total in 3 papers)
Electronic properties of semiconductors
Ab initio calculations of phonon dispersion in CdGa$_{2}$Se$_{4}$
Z. A. Jahangirliab, T. G. Kerimovaa, N. A. Abdullaeva, I. A. Mamedovaa, N. T. Mamedova a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Azerbaijan Technical University, Baku
Abstract:
The density of phonon states and the phonon dispersion in the Brillouin zone are calculated by the density functional method of. The displacements of atoms in the elementary cell are constructed for vibrations of the $A$, $B$, and $E$ symmetries. The calculated frequencies of optical phonons are consistent with the experimentally determined frequencies from the IR-absorption (infrared) and Raman-scattering spectra. In the $xy$ plane, the intersection of low-frequency optical phonons with acoustic phonons is observed.
Received: 20.10.2016 Accepted: 28.10.2016
Citation:
Z. A. Jahangirli, T. G. Kerimova, N. A. Abdullaev, I. A. Mamedova, N. T. Mamedov, “Ab initio calculations of phonon dispersion in CdGa$_{2}$Se$_{4}$”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 585–587; Semiconductors, 51:5 (2017), 556–558
Linking options:
https://www.mathnet.ru/eng/phts6149 https://www.mathnet.ru/eng/phts/v51/i5/p585
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