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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 6, Pages 815–820
DOI: https://doi.org/10.21883/FTP.2017.06.44562.8434
(Mi phts6140)
 

This article is cited in 5 scientific papers (total in 5 papers)

Micro- and nanocrystalline, porous, composite semiconductors

Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide

Yu. M. Basalaev, A. V. Kopytov, A. S. Poplavnoi, Yu. I. Polygalov

Kemerovo State University
Full-text PDF (800 kB) Citations (5)
Abstract: Ab initio calculations of the electronic spectrum, deformation electron density, and phonon frequencies at the center of the Brillouin zone of the CdAs$_2$ tetragonal compound are carried out in the context of the density-functional method. It is established that the crystal is an indirect-gap semiconductor with a band gap of $\sim$1 eV, which is in good agreement with well-known optical and electrical experimental data. The features of chemical bonding in the crystal are studied. The features are defined by the fact that As atoms form spiral chins of covalent As–As bonds, whereas Cd–As bonds are ionic-covalent. The ab initio calculated phonon frequencies are compared with the frequencies calculated in the Keating model and with experimental data; the partial contributions of Cd and As atoms are analyzed.
Received: 18.10.2016
Accepted: 15.11.2016
English version:
Semiconductors, 2017, Volume 51, Issue 6, Pages 783–788
DOI: https://doi.org/10.1134/S1063782617060057
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: Yu. M. Basalaev, A. V. Kopytov, A. S. Poplavnoi, Yu. I. Polygalov, “Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 815–820; Semiconductors, 51:6 (2017), 783–788
Citation in format AMSBIB
\Bibitem{BasKopPop17}
\by Yu.~M.~Basalaev, A.~V.~Kopytov, A.~S.~Poplavnoi, Yu.~I.~Polygalov
\paper Ab initio study of the electronic and vibrational structures of tetragonal cadmium diarsenide
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 6
\pages 815--820
\mathnet{http://mi.mathnet.ru/phts6140}
\crossref{https://doi.org/10.21883/FTP.2017.06.44562.8434}
\elib{https://elibrary.ru/item.asp?id=29404950}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 6
\pages 783--788
\crossref{https://doi.org/10.1134/S1063782617060057}
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  • https://www.mathnet.ru/eng/phts/v51/i6/p815
  • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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