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Amorphous, glassy, organic semiconductors
Influence of the samarium impurity on the structure and surface morphology of Se$_{95}$Te$_{5}$ chalcogenide glassy semiconductor
S. I. Mekhtieva, S. U. Atayeva, A. I. Isayev, V. Z. Zeynalov Abdullayev Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan
Abstract:
X-ray diffraction and atomic-force microscopy are used to study the structure and surface morphology of Se$_{95}$Te$_{5}$ chalcogenide glassy semiconductor films and the influence exerted on these films by doping with samarium. The parameters of the first sharp diffraction peak (FSDP), observed in X-ray diffraction patterns, are used to determine the numerical values of the local structure parameters, such as the “quasiperiod” of density fluctuations, correlation length [size of medium-range-order (MRO) regions], and nanovoid diameters. In addition, the numerical values of the roughness-amplitude parameters are determined. It is found that the disorder in the atomic structure and the irregularities on the surface of the films under study become more pronounced with increasing percentage content of the samarium impurity.
Received: 03.03.2016 Accepted: 11.10.2016
Citation:
S. I. Mekhtieva, S. U. Atayeva, A. I. Isayev, V. Z. Zeynalov, “Influence of the samarium impurity on the structure and surface morphology of Se$_{95}$Te$_{5}$ chalcogenide glassy semiconductor”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 809–814; Semiconductors, 51:6 (2017), 777–782
Linking options:
https://www.mathnet.ru/eng/phts6139 https://www.mathnet.ru/eng/phts/v51/i6/p809
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Abstract page: | 25 | Full-text PDF : | 5 |
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