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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 6, Pages 787–791
DOI: https://doi.org/10.21883/FTP.2017.06.44558.8433 (Mi phts6136) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Electronic properties of semiconductors

Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field

S.Sh. Rekhviashvili, A. A. Alikhanov

Institute of Applied Mathematics and Automation, Russian Academy of Science, Nalchik, Russia
Full-text PDF (319 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.06.44558.8433
Abstract: Based on the fractional-order partial differential equation, the diffusion-drift charge-carrier transport in a semiconductor layer with a fractal structure under a longitudinal alternating electric field is simulated. The simulation showed that the space–time distributions of carriers are broadened and asymmetric in layers with a fractal structure. Under certain conditions, the effect of charge oscillation frequency doubling in an external alternating electric field is observed.
Received: 22.11.2016
Accepted: 23.11.2016
English version:
Semiconductors, 2017, Volume 51, Issue 6, Pages 755–759
DOI: https://doi.org/10.1134/S1063782617060264
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S.Sh. Rekhviashvili, A. A. Alikhanov, “Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 787–791; Semiconductors, 51:6 (2017), 755–759
Citation in format AMSBIB
\Bibitem{RekAli17}
\by S.Sh.~Rekhviashvili, A.~A.~Alikhanov
\paper Simulation of drift-diffusion transport of charge carriers in semiconductor layers with a fractal structure in an alternating electric field
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 6
\pages 787--791
\mathnet{http://mi.mathnet.ru/phts6136}
\crossref{https://doi.org/10.21883/FTP.2017.06.44558.8433}
\elib{https://elibrary.ru/item.asp?id=29404946}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 6
\pages 755--759
\crossref{https://doi.org/10.1134/S1063782617060264}
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  • https://www.mathnet.ru/eng/phts/v51/i6/p787
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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