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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 6, Pages 756–758
DOI: https://doi.org/10.21883/FTP.2017.06.44551.11 (Mi phts6129) 		 
XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Simulation of the field-activated sintering of thermoelectric materials

L. P. Bulata, A. V. Novotelnovaa, V. B. Osvenskiib, A. S. Tukmakovaa, D. Yerezhepa

a St. Petersburg National Research University of Information Technologies, Mechanics and Optics
b OAO Giredmet, Moscow, Russia
Full-text PDF (401 kB)
DOI: https://doi.org/10.21883/FTP.2017.06.44551.11
Abstract: The field-activated sintering of segmented thermoelement branches is considered within a timedependent computer model. Modified asymmetric tooling with an electrical insulating layer is proposed. This tooling facilitates the formation of a temperature difference as high as several hundreds of kelvins in the sample. The influence of the insulating-layer thickness on the axial and radial temperature differences in the samples is analyzed. The possibility of reducing the radial temperature gradient is demonstrated.
Received: 12.12.2016
Accepted: 19.12.2016
English version:
Semiconductors, 2017, Volume 51, Issue 6, Pages 722–724
DOI: https://doi.org/10.1134/S1063782617060082
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: L. P. Bulat, A. V. Novotelnova, V. B. Osvenskii, A. S. Tukmakova, D. Yerezhep, “Simulation of the field-activated sintering of thermoelectric materials”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 756–758; Semiconductors, 51:6 (2017), 722–724
Citation in format AMSBIB
\Bibitem{BulNovOsv17}
\by L.~P.~Bulat, A.~V.~Novotelnova, V.~B.~Osvenskii, A.~S.~Tukmakova, D.~Yerezhep
\paper Simulation of the field-activated sintering of thermoelectric materials
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 6
\pages 756--758
\mathnet{http://mi.mathnet.ru/phts6129}
\crossref{https://doi.org/10.21883/FTP.2017.06.44551.11}
\elib{https://elibrary.ru/item.asp?id=29404939}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 6
\pages 722--724
\crossref{https://doi.org/10.1134/S1063782617060082}
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