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This article is cited in 6 scientific papers (total in 6 papers)
XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016
Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data
A. S. Orekhovab, T. S. Kamilovc, B. V. Ibragimovac, G. I. Ivakina, V. V. Klechkovskayaa a Shubnikov Institute of Crystallography, Federal Research Center "Crystallography and Photonics", Russian Academy of Sciences, Moscow, Russia
b National Research Centre "Kurchatov Institute", Moscow
c Tashkent State Technical University
Abstract:
The structural features of higher manganese-silicide films obtained by the diffusion doping of single-crystal silicon substrates with manganese vapor in a sealed cell and a flow-through quartz reactor with continuous pumping are comparatively analyzed. Scanning electron microscopy and high-resolution transmission electron microscopy show that a single-phase textured film of higher manganese silicide is formed in the evacuated cell. A change in the growth conditions from steady (cell) to quasi-steady-state (reactor) leads to the formation of polycrystalline islands of higher manganese silicide with nanoscale inclusions of the manganese-monosilicide phase.
Received: 12.12.2016 Accepted: 19.12.2016
Citation:
A. S. Orekhov, T. S. Kamilov, B. V. Ibragimova, G. I. Ivakin, V. V. Klechkovskaya, “Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 740–743; Semiconductors, 51:6 (2017), 706–709
Linking options:
https://www.mathnet.ru/eng/phts6125 https://www.mathnet.ru/eng/phts/v51/i6/p740
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