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This article is cited in 2 scientific papers (total in 2 papers)
XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016
On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ solid solution
L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov Ioffe Institute, St. Petersburg
Abstract:
It is shown that the Seebeck coefficient $\alpha$, the power factor $\alpha^{2}\sigma$, and the density-of-states effective mass $m/m_0$ in heteroepitaxial films of Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ solid solution are higher than the corresponding characteristics of bulk thermoelectric materials. The elevated values and weak temperature dependences of these parameters lead to a rise in the parameter proportional to the effective mass, the charge-carrier mobility, and the figure of merit. The character of change in $\alpha$, $\alpha^{2}\sigma$, and $m/m_0$ is determined by the peculiarities of the mechanism of charge-carrier scattering, the anisotropy of the constant-energy surface, and the possible influence of topological surface states of Dirac fermions in the films.
Received: 12.12.2016 Accepted: 19.12.2016
Citation:
L. N. Luk'yanova, Yu. A. Boikov, O. A. Usov, V. A. Danilov, “On the density-of-states effective mass and charge-carrier mobility in heteroepitaxial films of bismuth telluride and Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ solid solution”, Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 726–728; Semiconductors, 51:6 (2017), 692–694
Linking options:
https://www.mathnet.ru/eng/phts6121 https://www.mathnet.ru/eng/phts/v51/i6/p726
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