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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7, Pages 975–980
DOI: https://doi.org/10.21883/FTP.2017.07.44657.8465 (Mi phts6114) 		 
Electronic properties of semiconductors

Tensoresistance of $n$-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it

G. P. Gaidara, P. I. Baranskyb

a Institute for Nuclear Research of the National Academy of Sciences of Ukrainian
b Institute of Semiconductor Physics NAS, Kiev
Full-text PDF (308 kB)
DOI: https://doi.org/10.21883/FTP.2017.07.44657.8465
Abstract: Variations in the tensoresistance, tensomagnetoresistance, and magnetotensoresistance are experimentally and theoretically studied in wide ranges of magnetic-field strengths, 0 kOe $\le H\le$ 100 kOe, and mechanical stresses, 0 GPa $\le X \le$ 0.7 GPa, at 77 K under conditions of nondegenerate statistics of the electron gas in $n$-Ge crystals with different crystallographic orientations.
Received: 29.11.2016
Accepted: 07.12.2016
English version:
Semiconductors, 2017, Volume 51, Issue 7, Pages 936–941
DOI: https://doi.org/10.1134/S1063782617070090
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. P. Gaidar, P. I. Baransky, “Tensoresistance of $n$-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 975–980; Semiconductors, 51:7 (2017), 936–941
Citation in format AMSBIB
\Bibitem{GaiBar17}
\by G.~P.~Gaidar, P.~I.~Baransky
\paper Tensoresistance of $n$-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 7
\pages 975--980
\mathnet{http://mi.mathnet.ru/phts6114}
\crossref{https://doi.org/10.21883/FTP.2017.07.44657.8465}
\elib{https://elibrary.ru/item.asp?id=29772372}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 7
\pages 936--941
\crossref{https://doi.org/10.1134/S1063782617070090}
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