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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7, Pages 959–962
DOI: https://doi.org/10.21883/FTP.2017.07.44653.39
(Mi phts6110)
 

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Preparation and properties of Zn$_{4}$Sb$_{3}$-based thermoelectric material

V. P. Panchenkoab, N. Yu. Tabachkovab, A. A. Ivanova, B. R. Senatulinb, E. A. Andreevb

a JSC "Giredmet", Moscow, Russia
b National University of Science and Technology «MISIS», Moscow
Abstract: The effect of synthesis conditions on the structure and thermoelectric properties of materials based on zinc antimonide is investigated. Problems related to the effects of excess Zn, the spark plasma sintering conditions, and In doping on the phase structure and thermal stability of properties of the obtained material are considered. The material is prepared by the direct alloying of components with subsequent spark plasma sintering. It is shown that the addition of an excess amount of Zn and In doping under certain conditions of spark plasma sintering makes it possible to obtain $\beta$-Zn$_{4}$Sb$_{3}$ material with a thermoelectric-efficiency value of $ZT\approx$ 1.47 at a temperature of 720 K, which shows the stability of the properties within these tests.
Received: 27.12.2016
Accepted: 12.01.2017
English version:
Semiconductors, 2017, Volume 51, Issue 7, Pages 920–923
DOI: https://doi.org/10.1134/S1063782617070314
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. P. Panchenko, N. Yu. Tabachkova, A. A. Ivanov, B. R. Senatulin, E. A. Andreev, “Preparation and properties of Zn$_{4}$Sb$_{3}$-based thermoelectric material”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 959–962; Semiconductors, 51:7 (2017), 920–923
Citation in format AMSBIB
\Bibitem{PanTabIva17}
\by V.~P.~Panchenko, N.~Yu.~Tabachkova, A.~A.~Ivanov, B.~R.~Senatulin, E.~A.~Andreev
\paper Preparation and properties of Zn$_{4}$Sb$_{3}$-based thermoelectric material
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 7
\pages 959--962
\mathnet{http://mi.mathnet.ru/phts6110}
\crossref{https://doi.org/10.21883/FTP.2017.07.44653.39}
\elib{https://elibrary.ru/item.asp?id=29772368}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 7
\pages 920--923
\crossref{https://doi.org/10.1134/S1063782617070314}
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