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This article is cited in 1 scientific paper (total in 1 paper)
XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016
Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}]_{n}$ ($m,n$ = 0,1,2 $\dots$)
M. A. Kretova, M. A. Korzhuev, E. S. Avilov Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow, Russia
Abstract:
The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}]_{n}$ ($m,n$ = 0,1,2 $\dots$) to modify the electrical, mechanical, and other physical properties of samples are studied. A proportional decrease in the intercalated copper concentration $\Delta N_{\operatorname{Cu}}$ with decreasing relative volume density of van der Waals gaps $D_{\operatorname{VdW}}=1/s$ and with increasing package plyness $s$ and package thickness $\xi_{1}$ under variations in the composition of ternary alloys is revealed.
Received: 27.12.2016 Accepted: 12.01.2017
Citation:
M. A. Kretova, M. A. Korzhuev, E. S. Avilov, “Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}]_{n}$ ($m,n$ = 0,1,2 $\dots$)”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 937–939; Semiconductors, 51:7 (2017), 898–901
Linking options:
https://www.mathnet.ru/eng/phts6104 https://www.mathnet.ru/eng/phts/v51/i7/p937
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