Electrochemical studies of copper-doping processes in layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}]_{n}$ ($m,n$ = 0,1,2 $\dots$)

The processes of copper intercalation into the van der Waals gaps of layered ternary alloys of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}]_{n}$ ($m,n$ = 0,1,2 $\dots$) to modify the electrical, mechanical, and other physical properties of samples are studied. A proportional decrease in the intercalated copper concentration $\Delta N_{\operatorname{Cu}}$ with decreasing relative volume density of van der Waals gaps $D_{\operatorname{VdW}}=1/s$ and with increasing package plyness $s$ and package thickness $\xi_{1}$ under variations in the composition of ternary alloys is revealed.