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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7, Pages 933–936
DOI: https://doi.org/10.21883/FTP.2017.07.44646.32
(Mi phts6103)
 

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Symmetry ratios and structural code of layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}$]$_{n}$ ($m,n$ = 0,1,2 $\dots$)

M. A. Korzhuev, F. B. Mikhailova, M. A. Kretova, E. S. Avilov

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, Moscow, Russia
Abstract: The crystal structures of layered crystals, i.e. ternary alloys [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}$]$_{n}$ ($m,n$ = 0,1,2 $\dots$) (space groups $R\bar3m$, $P\bar3m_1$, and $P2_{1}/m$) are analyzed. The hierarchical relations between various space groups of ternary alloys are determined. The structural code of crystals of the family is determined, which takes into account their composition, crystal structure, and thermodynamic stability of layer stacks forming the superstructures.
Received: 27.12.2016
Accepted: 12.01.2017
English version:
Semiconductors, 2017, Volume 51, Issue 7, Pages 894–897
DOI: https://doi.org/10.1134/S106378261707017X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Korzhuev, F. B. Mikhailova, M. A. Kretova, E. S. Avilov, “Symmetry ratios and structural code of layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}$]$_{n}$ ($m,n$ = 0,1,2 $\dots$)”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 933–936; Semiconductors, 51:7 (2017), 894–897
Citation in format AMSBIB
\Bibitem{KorMikKre17}
\by M.~A.~Korzhuev, F.~B.~Mikhailova, M.~A.~Kretova, E.~S.~Avilov
\paper Symmetry ratios and structural code of layered crystals of the family [(Ge,Sn,Pb)(Te,Se)]$_{m}$[(Bi,Sb)$_{2}$(Te,Se)$_{3}$]$_{n}$ ($m,n$ = 0,1,2 $\dots$)
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 7
\pages 933--936
\mathnet{http://mi.mathnet.ru/phts6103}
\crossref{https://doi.org/10.21883/FTP.2017.07.44646.32}
\elib{https://elibrary.ru/item.asp?id=29772361}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 7
\pages 894--897
\crossref{https://doi.org/10.1134/S106378261707017X}
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