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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 7, Pages 917–920
DOI: https://doi.org/10.21883/FTP.2017.07.44642.28
(Mi phts6099)
 

This article is cited in 4 scientific papers (total in 4 papers)

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Galvanomagnetic properties of bismuth films with a thin antimony coating or sublayer

N. S. Kablukova, V. A. Komarov, D. O. Skanchenko, E. S. Makarova, E. V. Demidov

Herzen State Pedagogical University of Russia, St. Petersburg
Full-text PDF (528 kB) Citations (4)
Abstract: The effect of modification of the surfaces of bismuth thin films with an antimony layer of 10 nm thick was studied. Three types of structures deposited onto mica substrates are compared: a bismuth film, an antimony layer as a sublayer for the bismuth film, and an antimony layer as the coating of the bismuth film. A substantial difference in the galvanomagnetic properties of the obtained structures is revealed in the dependence on the position of the antimony layer in the structure and on the bismuth-film thickness.
Received: 27.12.2016
Accepted: 12.01.2017
English version:
Semiconductors, 2017, Volume 51, Issue 7, Pages 879–882
DOI: https://doi.org/10.1134/S1063782617070168
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. S. Kablukova, V. A. Komarov, D. O. Skanchenko, E. S. Makarova, E. V. Demidov, “Galvanomagnetic properties of bismuth films with a thin antimony coating or sublayer”, Fizika i Tekhnika Poluprovodnikov, 51:7 (2017), 917–920; Semiconductors, 51:7 (2017), 879–882
Citation in format AMSBIB
\Bibitem{KabKomSka17}
\by N.~S.~Kablukova, V.~A.~Komarov, D.~O.~Skanchenko, E.~S.~Makarova, E.~V.~Demidov
\paper Galvanomagnetic properties of bismuth films with a thin antimony coating or sublayer
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 7
\pages 917--920
\mathnet{http://mi.mathnet.ru/phts6099}
\crossref{https://doi.org/10.21883/FTP.2017.07.44642.28}
\elib{https://elibrary.ru/item.asp?id=29772357}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 7
\pages 879--882
\crossref{https://doi.org/10.1134/S1063782617070168}
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  • https://www.mathnet.ru/eng/phts/v51/i7/p917
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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