Fizika i Tekhnika Poluprovodnikov
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Fizika i Tekhnika Poluprovodnikov:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1105–1109
DOI: https://doi.org/10.21883/FTP.2017.08.44798.8457
(Mi phts6078)
 

This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Influence of traps in silicon dioxide on the breakdown of MOS structures

O. V. Aleksandrov

Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (206 kB) Citations (3)
Abstract: A model for numerical calculation of the voltage and delay time of the breakdown of MOS structures based on the anode-hole-injection mechanism, which takes into account the depth distributions of hole and electron traps in the dielectric layer, is developed. It is shown that the breakdown voltage is determined by charge accumulation at hole traps in the gate dielectric near the cathode and depends also on the presence of hole traps near the anode and electron traps. The calculated breakdown delay time follows the exponential law 1/$E$ in a wide range of field strengths and is in agreement with the experimental data. At short impact times ($t<$ 10$^{-5}$ s), breakdown is determined by charge accumulation at free holes.
Received: 22.11.2016
Accepted: 01.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1062–1066
DOI: https://doi.org/10.1134/S1063782617080024
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Aleksandrov, “Influence of traps in silicon dioxide on the breakdown of MOS structures”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1105–1109; Semiconductors, 51:8 (2017), 1062–1066
Citation in format AMSBIB
\Bibitem{Ale17}
\by O.~V.~Aleksandrov
\paper Influence of traps in silicon dioxide on the breakdown of MOS structures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1105--1109
\mathnet{http://mi.mathnet.ru/phts6078}
\crossref{https://doi.org/10.21883/FTP.2017.08.44798.8457}
\elib{https://elibrary.ru/item.asp?id=29938291}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1062--1066
\crossref{https://doi.org/10.1134/S1063782617080024}
Linking options:
  • https://www.mathnet.ru/eng/phts6078
  • https://www.mathnet.ru/eng/phts/v51/i8/p1105
  • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
    Statistics & downloads:
    Abstract page:36
    Full-text PDF :12
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024