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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1091–1095
DOI: https://doi.org/10.21883/FTP.2017.08.44796.8119 (Mi phts6076) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Surface, interfaces, thin films

Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers

K. S. Sekerbaevab, E. T. Taurbaevab, A. I. Efimovac, V. Yu. Timoshenkocd, T. I. Taurbaevab

a SRI of Experimental and Theoretical Physics, Al-Farabi Kazakh National University, Almaty
b National Nanotechnology Laboratory of open type, al-Farabi KazNU
c Faculty of Physics, Lomonosov Moscow State University
d National Engineering Physics Institute "MEPhI", Moscow
Full-text PDF (385 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.08.44796.8119
Abstract: The infrared optical properties of anisotropic mesoporous silicon films containing free charge carriers (holes) are studied experimentally and theoretically. The results of simulation of the optical properties of the produced samples in the effective-medium approximation show a heavy dependence of the birefringence, reflection anisotropy, and dichroism on the concentration of free charge carriers. The unsteady behavior of the differential transmittance recorded for the samples at mutually perpendicular polarization directions of light are attributed to the effect of charge carriers with a concentration on the order of 10$^{19}$ cm$^{-3}$. The results of the study suggest that anisotropic silicon nanostructures are promising materials for infrared photonics and terahertz engineering.
Received: 13.12.2016
Accepted: 25.01.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1047–1051
DOI: https://doi.org/10.1134/S1063782617080279
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. S. Sekerbaev, E. T. Taurbaev, A. I. Efimova, V. Yu. Timoshenko, T. I. Taurbaev, “Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1091–1095; Semiconductors, 51:8 (2017), 1047–1051
Citation in format AMSBIB
\Bibitem{SekTauEfi17}
\by K.~S.~Sekerbaev, E.~T.~Taurbaev, A.~I.~Efimova, V.~Yu.~Timoshenko, T.~I.~Taurbaev
\paper Effect of free charge carriers on birefringence and dichroism in anisotropic porous silicon layers
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1091--1095
\mathnet{http://mi.mathnet.ru/phts6076}
\crossref{https://doi.org/10.21883/FTP.2017.08.44796.8119}
\elib{https://elibrary.ru/item.asp?id=29938289}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1047--1051
\crossref{https://doi.org/10.1134/S1063782617080279}
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  • https://www.mathnet.ru/eng/phts/v51/i8/p1091
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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