Impurity levels in Hg$_{3}$In$_{2}$Te$_{6}$ crystals

The parameters of impurity levels in Hg$_{3}$In$_{2}$Te$_{6}$ samples are studied using the temperature dependences of the electron concentration $n(T)$ and the Fermi-level energy $E_F(T)$. The dependences $n(T)$ and $E_F(T)$ are obtained from data on the Hall coefficient $R(T)$ and the thermopower $\alpha(T)$. Differential analysis of the dependences $n(T)$ shows that, under variations in the degree of compensation by heat treatment of the samples, a wider spectrum of impurity levels in the band gap of Hg$_{3}$In$_{2}$Te$_{6}$ can be analyzed.