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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1078–1084
DOI: https://doi.org/10.21883/FTP.2017.08.44793.8454
(Mi phts6073)
 

This article is cited in 1 scientific paper (total in 1 paper)

Electronic properties of semiconductors

Complex structure of optical transitions from the core $d$-levels of InAs and InSb crystals

V. V. Sobolev, D. A. Perevoshchikov

Udmurt State University, Izhevsk
Full-text PDF (364 kB) Citations (1)
Abstract: Using an improved parameterless unified Argand diagram method, the permittivity spectra of InAs and InSb crystals in the range of 15–40 eV are decomposed into thirteen and twelve separate components, respectively, with the three main parameters, specifically, the maximum energies, half-width, and oscillator strength determined for each of them. The oscillator strengths are in the ranges of 0.006–0.10 for InAs and 0.014–0.076 for InSb. The permittivity spectra were preliminary calculated on the basis of experimental reflectance and absorption spectra using Kramers–Kronig integral relations. On the basis of a model of interband and exciton transitions, the nature of the obtained transition bands is suggested.
Received: 22.11.2016
Accepted: 25.01.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1034–1040
DOI: https://doi.org/10.1134/S1063782617080309
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Sobolev, D. A. Perevoshchikov, “Complex structure of optical transitions from the core $d$-levels of InAs and InSb crystals”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1078–1084; Semiconductors, 51:8 (2017), 1034–1040
Citation in format AMSBIB
\Bibitem{SobPer17}
\by V.~V.~Sobolev, D.~A.~Perevoshchikov
\paper Complex structure of optical transitions from the core $d$-levels of InAs and InSb crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1078--1084
\mathnet{http://mi.mathnet.ru/phts6073}
\crossref{https://doi.org/10.21883/FTP.2017.08.44793.8454}
\elib{https://elibrary.ru/item.asp?id=29938286}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1034--1040
\crossref{https://doi.org/10.1134/S1063782617080309}
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  • https://www.mathnet.ru/eng/phts/v51/i8/p1078
  • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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