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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1071–1074
DOI: https://doi.org/10.21883/FTP.2017.08.44791.8484
(Mi phts6071)
 

Non-electronic properties of semiconductors (atomic structure, diffusion)

Mn$_{0.1}$Ag$_{0.9}$In$_{4.7}$S$_{7.6}$ single crystals: Crystal structure, band gap, and thermal expansion

I. V. Bondar', Chan Bin Tkhan

Belarussian State University of Computer Science and Radioelectronic Engineering, Minsk, Belarus
Abstract: Mn$_{0.1}$Ag$_{0.9}$In$_{4.7}$S$_{7.6}$ single crystals are for the first time grown by the Bridgman method (vertical variant). The single crystals crystallize in the cubic spinel structure. The band gap of the single crystals is determined from the transmittance spectra in the region of the fundamental absorption edge at temperatures of $T$ = 295 and 80 K. Thermal expansion is studied by the dilatometric method in the temperature range 80–500 K. The coefficients of thermal expansion, the Debye temperatures, and the rms (root mean square) dynamic displacements of atoms are calculated.
Received: 13.12.2016
Accepted: 01.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1027–1030
DOI: https://doi.org/10.1134/S1063782617080036
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. V. Bondar', Chan Bin Tkhan, “Mn$_{0.1}$Ag$_{0.9}$In$_{4.7}$S$_{7.6}$ single crystals: Crystal structure, band gap, and thermal expansion”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1071–1074; Semiconductors, 51:8 (2017), 1027–1030
Citation in format AMSBIB
\Bibitem{BonTkh17}
\by I.~V.~Bondar', Chan~Bin~Tkhan
\paper Mn$_{0.1}$Ag$_{0.9}$In$_{4.7}$S$_{7.6}$ single crystals: Crystal structure, band gap, and thermal expansion
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1071--1074
\mathnet{http://mi.mathnet.ru/phts6071}
\crossref{https://doi.org/10.21883/FTP.2017.08.44791.8484}
\elib{https://elibrary.ru/item.asp?id=29938284}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1027--1030
\crossref{https://doi.org/10.1134/S1063782617080036}
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