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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1064–1067
DOI: https://doi.org/10.21883/FTP.2017.08.44789.58
(Mi phts6069)
 

This article is cited in 4 scientific papers (total in 4 papers)

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Structure of Bi$_{2}$Se$_{0.3}$Te$_{2.7}$ alloy plates obtained by crystallization in a flat cavity by the Bridgman method

V. D. Demchegloa, A. I. Voronina, N. Yu. Tabachkovaa, V. T. Bublika, V. F. Ponomarevb

a National University of Science and Technology «MISIS», Moscow
b Crystal Ltd., Korolev, Moscow region, Russia
Full-text PDF (172 kB) Citations (4)
Abstract: The property anisotropy in Bi$_{2}$Se$_{0.3}$Te$_{2.7}$ alloy is analyzed by constructing index surfaces for the thermoelectric figure of merit and thermal expansion coefficient. Texture is an important factor forming the property anisotropy and technological applicability of an ingot for fabricating modules. The property anisotropy is analyzed based on studying the texture in ingots produced by the modified Bridgman method (thermoelectric plate growth in a flat cavity). Analysis of the texture shows that not only the crystallization rate, but also the crystallization cavity design is an important factor for the proposed crystallization method, affecting the formation of the thermoelectric-material structure. As the plate thickness is decreased by changing the heat removal conditions in a thin gap, a more perfect structure can be obtained.
Received: 31.01.2017
Accepted: 08.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1021–1023
DOI: https://doi.org/10.1134/S1063782617080085
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. D. Demcheglo, A. I. Voronin, N. Yu. Tabachkova, V. T. Bublik, V. F. Ponomarev, “Structure of Bi$_{2}$Se$_{0.3}$Te$_{2.7}$ alloy plates obtained by crystallization in a flat cavity by the Bridgman method”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1064–1067; Semiconductors, 51:8 (2017), 1021–1023
Citation in format AMSBIB
\Bibitem{DemVorTab17}
\by V.~D.~Demcheglo, A.~I.~Voronin, N.~Yu.~Tabachkova, V.~T.~Bublik, V.~F.~Ponomarev
\paper Structure of Bi$_{2}$Se$_{0.3}$Te$_{2.7}$ alloy plates obtained by crystallization in a flat cavity by the Bridgman method
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1064--1067
\mathnet{http://mi.mathnet.ru/phts6069}
\crossref{https://doi.org/10.21883/FTP.2017.08.44789.58}
\elib{https://elibrary.ru/item.asp?id=29938282}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1021--1023
\crossref{https://doi.org/10.1134/S1063782617080085}
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  • https://www.mathnet.ru/eng/phts/v51/i8/p1064
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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