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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 8, Pages 1048–1051
DOI: https://doi.org/10.21883/FTP.2017.08.44785.54
(Mi phts6065)
 

XV International Conference ''Thermoelectrics and Their Applications-2016 St. Petersburg'', November 15-16, 2016

Thermoelectric properties of the Mg$_{2}$Ge$_{0.3}$Sn$_{0.7}$ solid solution with $p$-type conductivity

G. N. Isachenkoab, A. Yu. Samunina, V. K. Zaitseva, E. A. Gurievaa, P. P. Konstantinova

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract: The thermoelectric properties of the Mg$_{2}$Ge$_{0.3}$Sn$_{0.7}$ solid solution doped with Ga and Li are studied. The samples with a hole concentration as high as 5 $\times$ 10$^{20}$ cm$^{-3}$ are obtained. The temperature dependences of the thermopower, electrical conductivity, and thermal conductivity are measured in the range from room temperature to 800 K. A higher mobility of free charge carriers is observed in the samples doped with lithium than in the samples doped with gallium. The largest thermoelectric figure of merit in the samples under study amounts to 0.42 at 700 K.
Received: 31.01.2017
Accepted: 08.02.2017
English version:
Semiconductors, 2017, Volume 51, Issue 8, Pages 1005–1008
DOI: https://doi.org/10.1134/S1063782617080127
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. N. Isachenko, A. Yu. Samunin, V. K. Zaitsev, E. A. Gurieva, P. P. Konstantinov, “Thermoelectric properties of the Mg$_{2}$Ge$_{0.3}$Sn$_{0.7}$ solid solution with $p$-type conductivity”, Fizika i Tekhnika Poluprovodnikov, 51:8 (2017), 1048–1051; Semiconductors, 51:8 (2017), 1005–1008
Citation in format AMSBIB
\Bibitem{IsaSamZai17}
\by G.~N.~Isachenko, A.~Yu.~Samunin, V.~K.~Zaitsev, E.~A.~Gurieva, P.~P.~Konstantinov
\paper Thermoelectric properties of the Mg$_{2}$Ge$_{0.3}$Sn$_{0.7}$ solid solution with $p$-type conductivity
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 8
\pages 1048--1051
\mathnet{http://mi.mathnet.ru/phts6065}
\crossref{https://doi.org/10.21883/FTP.2017.08.44785.54}
\elib{https://elibrary.ru/item.asp?id=29938278}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 8
\pages 1005--1008
\crossref{https://doi.org/10.1134/S1063782617080127}
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